![泰州中來2.3MW分布式光伏發電項目]( "泰州中來2.3MW分布式光伏發電項目")
本該(gai)(gai)大型(xing)(xing)(xing)該(gai)(gai)項目(mu)(mu)規劃在(zai)泰州(zhou)市姜堰小區(qu)(qu)內(nei)建(jian)沒分布點(dian)式并網(wang)光(guang)伏太(tai)陽系(xi)能(neng)(neng)(neng)設(she)備化(hua)性(xing)(xing)。設(she)備化(hua)性(xing)(xing)安裝在(zai)泰州(zhou)里光(guang)電(dian)(dian)(dian)(dian)子科技平(ping)(ping)臺有(you)(you)(you)限平(ping)(ping)臺英(ying)文(wen)平(ping)(ping)臺所建(jian)筑的(de)(de)產銷(xiao)量2.1GW N型(xing)(xing)(xing)多晶硅(gui)(gui)(gui)體(ti)(ti)(ti)硅(gui)(gui)(gui)手(shou)機(ji)(ji)充(chong)(chong)電(dian)(dian)(dian)(dian)片(pian)該(gai)(gai)大型(xing)(xing)(xing)該(gai)(gai)項目(mu)(mu)車(che)(che)間設(she)備房項和(he)(he)轎(jiao)車(che)(che)棚(peng)頂、廢城(cheng)(cheng)市污水整(zheng)理站在(zai)方(fang)，設(she)備化(hua)性(xing)(xing)總裝機(ji)(ji)設(she)備發(fa)(fa)(fa)(fa)熱量達到了(le)(le)2270.62KWp，安裝占(zhan)地(di)25000m^2。本該(gai)(gai)大型(xing)(xing)(xing)該(gai)(gai)項目(mu)(mu)明(ming)顯的(de)(de)方(fang)法特征(zheng) 體(ti)(ti)(ti)現在(zai)模(mo)塊(kuai)(kuai)(kuai)和(he)(he)吊架(jia)的(de)(de)進(jin)行。模(mo)塊(kuai)(kuai)(kuai)的(de)(de)1#車(che)(che)間設(she)備、2#車(che)(che)間設(she)備、5#主要原料倉(cang)庫區(qu)(qu)適用(yong)的(de)(de)是255Wp的(de)(de)P型(xing)(xing)(xing)模(mo)塊(kuai)(kuai)(kuai)，立(li)即車(che)(che)車(che)(che)棚(peng)、轎(jiao)車(che)(che)棚(peng)、廢城(cheng)(cheng)市污水整(zheng)理站選取(qu)里自己(ji)開發(fa)(fa)(fa)(fa)的(de)(de)285Wp的(de)(de)N型(xing)(xing)(xing)多晶硅(gui)(gui)(gui)體(ti)(ti)(ti)單(dan)(dan)面速(su)率(lv)(lv)高雙玻(bo)模(mo)塊(kuai)(kuai)(kuai)和(he)(he)285Wp的(de)(de)N型(xing)(xing)(xing)多晶硅(gui)(gui)(gui)體(ti)(ti)(ti)單(dan)(dan)面速(su)率(lv)(lv)高白色模(mo)塊(kuai)(kuai)(kuai)。N型(xing)(xing)(xing)單(dan)(dan)面手(shou)機(ji)(ji)充(chong)(chong)電(dian)(dian)(dian)(dian)模(mo)塊(kuai)(kuai)(kuai)，其有(you)(you)(you)著有(you)(you)(you)以(yi)下9大特征(zheng) ——高和(he)(he)變(bian)為(wei)(wei)了(le)(le)率(lv)(lv)：手(shou)機(ji)(ji)充(chong)(chong)電(dian)(dian)(dian)(dian)反面和(he)(he)變(bian)為(wei)(wei)了(le)(le)率(lv)(lv)~21.0%這，仍(reng)具進(jin)一(yi)次(ci)上(shang)升竟爭力(li)；單(dan)(dan)面火(huo)力(li)來發(fa)(fa)(fa)(fa)電(dian)(dian)(dian)(dian)：手(shou)機(ji)(ji)充(chong)(chong)電(dian)(dian)(dian)(dian)后邊速(su)率(lv)(lv)~19%，利用(yong)漫反射面自然光(guang)可(ke)上(shang)升設(she)備化(hua)性(xing)(xing)火(huo)力(li)發(fa)(fa)(fa)(fa)蓄充(chong)(chong)電(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)池容量30%；光(guang)致(zhi)衰減：無LID，能(neng)(neng)(neng)否最好(hao)(hao)地(di)保障(zhang)措施來發(fa)(fa)(fa)(fa)電(dian)(dian)(dian)(dian)廠(chang)設(she)備化(hua)性(xing)(xing)的(de)(de)火(huo)力(li)發(fa)(fa)(fa)(fa)蓄充(chong)(chong)電(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)池容量，降低投資費(fei)(fei)用(yong)回報率(lv)(lv)期；攝氏因(yin)子：N型(xing)(xing)(xing)手(shou)機(ji)(ji)充(chong)(chong)電(dian)(dian)(dian)(dian)模(mo)塊(kuai)(kuai)(kuai)的(de)(de)攝氏因(yin)子絕對(dui)值(zhi)≤0.4%；散溫性(xing)(xing)好(hao)(hao)：N型(xing)(xing)(xing)雙玻(bo)模(mo)塊(kuai)(kuai)(kuai)工作(zuo)上(shang)攝氏較(jiao)一(yi)般模(mo)塊(kuai)(kuai)(kuai)低5-9攝氏，不(bu)適合常(chang)溫國家(jia)；弱(ruo)光(guang)崩潰：成(cheng)績突出的(de)(de)弱(ruo)光(guang)光(guang)譜分析崩潰，提(ti)高自己(ji)來發(fa)(fa)(fa)(fa)電(dian)(dian)(dian)(dian)廠(chang)縱向火(huo)力(li)發(fa)(fa)(fa)(fa)蓄充(chong)(chong)電(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)池容量，上(shang)升來發(fa)(fa)(fa)(fa)電(dian)(dian)(dian)(dian)廠(chang)貼現率(lv)(lv)；度電(dian)(dian)(dian)(dian)成(cheng)本價(jia)(jia)費(fei)(fei)用(yong)：多晶硅(gui)(gui)(gui)體(ti)(ti)(ti)單(dan)(dan)面太(tai)陽系(xi)能(neng)(neng)(neng)手(shou)機(ji)(ji)充(chong)(chong)電(dian)(dian)(dian)(dian)單(dan)(dan)面均能(neng)(neng)(neng)否火(huo)力(li)來發(fa)(fa)(fa)(fa)電(dian)(dian)(dian)(dian)，度電(dian)(dian)(dian)(dian)成(cheng)本價(jia)(jia)費(fei)(fei)用(yong)更(geng)低；壽命長：適用(yong)雙玻(bo)芯片(pian)封裝的(de)(de)模(mo)塊(kuai)(kuai)(kuai)壽命可(ke)過去了(le)(le)30年(nian)，聯系(xi)多功能(neng)(neng)(neng)透明(ming)硅(gui)(gui)(gui)膠、丁基(ji)膠封閉方(fang)法，的(de)(de)使用(yong)壽命更(geng)可(ke)可(ke)超(chao)過40年(nian)之久。